| PART |
Description |
Maker |
| L3240B1 L3240D1 L3240 |
ELETRONIC TWO-TONE RINGER
CAP CER 1.5UF 100V 20% X7R 1812
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRF9240 IRF9240-SMD |
CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET
|
TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
|
| KF931 KF931V |
CAP CER 250VAC 1500PF X7R 2211
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR RF CIRCUITS OF CORDLESS PHONE(CT-1 )
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| C1812X334K1RACTU |
SMD Comm X7R Flex, Ceramic, 0.33 uF, 10%, 100 V, X7R, SMD, MLCC, FT-CAP, Temperature Stable, 1812
|
Kemet Corporation
|
| QM30HA-H |
CAP CER 10000PF 100V X7R 1005 中功率开关使用绝缘型
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 1812SC111MAZ9A 1812SC111MAZ1A 1812SC111MAZ3A 2225S |
CAPACITOR, CERAMIC, MULTILAYER, 1500 V, X7R, 0.00011 uF, SURFACE MOUNT, 1812 CHIP, ROHS COMPLIANT
CAP 0.039UF 1500V 10% X7R SMD-2225 TR-7 FLEXITERM CAPACITOR, CERAMIC, MULTILAYER, 1500 V, X7R, 0.039 uF, SURFACE MOUNT, 2225
|
AVX, Corp.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| QM100 QM100TX1-HB |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, STN Blue
CAP, CHIP, 1812, 16V, X7R, 10UF
大功率开关使用绝缘型
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IRF9230 JANTXV2N6806 JANTX2N6806 |
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
| M27C4002 M27C4002-10B1TR M27C4002-10B1X M27C4002-1 |
Fuses, 750mA 63V T CHIP 1206
Fuses, 5A 125V F CHIP 0603 4兆位存储器的256Kb x16紫外线和OTP存储
4 Mbit 256Kb x16 UV EPROM and OTP EPROM 4兆位存储器的256Kb x16紫外线和OTP存储
CAP 18PF 100V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 100V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 1500PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.015UF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 16PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 150PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
